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dc.contributor.authorTakci, D. K.
dc.contributor.authorTuzemen, E. Senadim
dc.contributor.authorYilmaz, S.
dc.contributor.authorEsen, R.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:47:29Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:47:29Z
dc.date.issued2015
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.urihttps://hdl.handle.net/20.500.12418/7681
dc.descriptionWOS: 000368046800040en_US
dc.description.abstractThe effects of Al concentration on XPS, Raman, Hall and photovoltaic properties of Al-doped ZnO films were investigated onto Si (100) substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system, at room temperature. The Al doping effects in ZnO was performed by Raman measurements. The chemical state of ZnO:Al (AZO) films on Si substrate was investigated by using X-ray photoelectron spectroscopy (XPS). Hall Effect measurements were applied to characterize the electrical properties. Effect of doping concentration on photovoltaic property was also studied.en_US
dc.language.isoengen_US
dc.publisherNATL INST OPTOELECTRONICSen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAl doped ZnOen_US
dc.subjectPhotovoltaic propertyen_US
dc.subjectPulsed filtered cathodic vacuum arc depositionen_US
dc.titleEffects of Al concentration on photovoltaic property of ZnO:Al/p-type Si by pulsed filtered cathodic vacuum arc depositio ri systemen_US
dc.typearticleen_US
dc.relation.journalOPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONSen_US
dc.contributor.department[Takci, D. K. -- Yilmaz, S. -- Esen, R.] Cukurova Univ, Dept Phys, TR-01330 Adana, Turkey -- [Tuzemen, E. Senadim] Cumhuriyet Univ, Dept Phys, Nanophoton Ctr, TR-58140 Sivas, Turkeyen_US
dc.contributor.authorIDTAKCI, DENIZ KADIR -- 0000-0002-9841-242Xen_US
dc.identifier.volume9en_US
dc.identifier.issue11.Decen_US
dc.identifier.endpage1556en_US
dc.identifier.startpage1549en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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