dc.contributor.author | Turut, A. | |
dc.contributor.author | Dogan, H. | |
dc.contributor.author | Yildirim, N. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:47:48Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:47:48Z | |
dc.date.issued | 2015 | |
dc.identifier.issn | 2053-1591 | |
dc.identifier.uri | https://dx.doi.org/10.1088/2053-1591/2/9/096304 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/7725 | |
dc.description | WOS: 000370057200051 | en_US |
dc.description.abstract | Wehave fabricated the Au/Ni/n-GaN structures and measured their capacitance-frequency (C-f) and conductance (G/w)-angular frequency (w) characteristics in the temperature range of 60-320 K. The C-f curves for different reverse bias voltages have shown a behavior almost independent of the bias voltage at frequencies above 300 kHz at each measurement temperature. Wehave calculated the temperature-dependent interface state density, N-ss, values from the G/w versus w curves. The N-ss value for the Ni/n-GaN interface ranges from 3.36 x 10(11) cm(-2) eV(-1) at 0.0 V to 2.92 x 10(11) cm(-2) eV(-1) at 0.40 V for 60 K, and 6.63 x 10(11) cm(-2) eV(-1) at 0.0 V to 3.87 x 10(11) cm(-2) eV(-1) at 0.40 V for 320 K. That is, the interface state density value increases with increasing temperature. It has been seen that the values of N-ss obtained from the G/w versus w curves of the device are lower than the given values for metal/n-type GaN interface in the literature. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.relation.isversionof | 10.1088/2053-1591/2/9/096304 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | GaN semiconductors | en_US |
dc.subject | Schottky barrier | en_US |
dc.subject | metal-semiconductor devices | en_US |
dc.subject | impedance spectroscopy | en_US |
dc.title | The interface state density characterization by temperature-dependent capacitance-conductance-frequency measurements in Au/Ni/n-GaN structures | en_US |
dc.type | article | en_US |
dc.relation.journal | MATERIALS RESEARCH EXPRESS | en_US |
dc.contributor.department | [Turut, A.] Istanbul Medeniyet Univ, Fac Sci, Dept Engn Phys, TR-34730 Istanbul, Turkey -- [Dogan, H.] Cumhuriyet Univ, Fac Engn, Dept Elect Elect Engn, TR-58140 Sivas, Turkey -- [Yildirim, N.] Bingol Univ, Fac Sci & Arts, Dept Phys, TR-12000 Bingol, Turkey | en_US |
dc.contributor.authorID | YILDIRIM, Nezir -- 0000-0002-1864-2269; YILDIRIM, Nezir -- 0000-0002-1864-2269 | en_US |
dc.identifier.volume | 2 | en_US |
dc.identifier.issue | 9 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |