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Now showing items 11-17 of 17
Geometrical effects on shallow donor impurities in quantum wires
(ELSEVIER SCIENCE BV, 2003)
We have studied theoretically the impurity binding energy for wires of different shapes (V-shaped quantum wire (V-QWR) and rectangular wire) with a variational procedure without using any coordinate transformation. The ...
Optical properties of excitons in quantum well wires under the magnetic field
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2003)
The binding energy of excitons in quantum well wires of GaAs surrounded by Ga1-xAlxAs was calculated in an effective mass approximation with the use of the variational approach. Results obtained show that the exciton binding ...
Binding energy of hydrogenic impurities in a quantum well under the tilted magnetic field
(PERGAMON-ELSEVIER SCIENCE LTD, 2003)
This paper treats theoretically the angle dependence of the ground state binding energy of a shallow donor impurity in semiconductor quantum-well systems on the tilted magnetic field. By making an appropriate coordinate ...
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
(E D P SCIENCES, 2003)
We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ...
The effect of an intense laser field on magneto donors in semiconductors
(ELSEVIER SCIENCE BV, 2003)
The laser-field dependence of the binding energy of shallow-donor impurities in graded, and square quantum wells under the external magnetic field is calculated by a variational method and in the effective mass approximation. ...
Intense field effects on shallow donor impurities in graded quantum wells
(IOP PUBLISHING LTD, 2003)
Using a variational method and within the effective mass approximation, we calculate the laser-field dependence of binding energy and the polarizability of shallow-donor impurities in graded quantum wells under an external ...
Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ...