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Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ...
The dependence of the intersubband transitions in square and graded QWs on intense laser fields
(PERGAMON-ELSEVIER SCIENCE LTD, 2004)
The intersubband absorption in square and graded quantum wells under a laser field is calculated within the framework of the effective mass approximation. We conclude that, for quantum wells with different shapes, the laser ...