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Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness
(CAMBRIDGE UNIV PRESS, 2008)
For a uniform distribution we have theoretically studied the subband structure of p-type delta-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the delta-doping concentration and the ...
Binding energy of impurity states in an inverse parabolic quantum well under magnetic field
(ELSEVIER SCIENCE BV, 2007)
We have investigated the effects of the magnetic field which is directed perpendicular to the well on the binding energy of the hydrogenic impurities in an inverse parabolic quantum well (IPQW) with different widths as ...
Broadband asymmetric quantum-well infrared photodetector in long-wavelength infrared range (LWIR)
(IEEE, 2007)
A theoretical investigation of a GaAs-AlGaAs infrared detector consisting of three asymmetric quantum wells is presented. Each quantum well is sensitive to yield absorption and a photoresponse at peak wavelengths of 8 pro, ...
The effects of intense laser field and electric field on intersubband absorption in a double-graded quantum well
(ELSEVIER SCIENCE BV, 2008)
In this study, the intense laser-field dependence of intersubband absorption coefficient for 1-2 transition in GaAs/Ga1-xAlxAs DGQW under the electric field is investigated. The obtained results show that by changing the ...
Density of impurity states of hydrogenic impurities in an inverse parabolic quantum well under the magnetic field
(ELSEVIER SCIENCE BV, 2007)
We investigated the effects of the magnetic field on the density of impurity states in a GaAs/GaAlAs inverse parabolic quantum well (lPQW) for different Al concentrations at the well center. The calculations were performed ...