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Linear and nonlinear optical absorption coefficient and electronic features of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on barrier widths
(ELSEVIER GMBH, 2019)
In the present work, the effect of the barrier widths (BWs) on the linear and nonlinear optical absorption coefficient (OAC) and the electronic features of asymmetric triple Ga1-xAlxAs/GaAs (A structure) and Ga1-xInxAs/GaAs ...
Linear and nonlinear optical properties of asymmetric triple quantum wells under intense laser field
(IOP PUBLISHING LTD, 2019)
For asymmetric triple quantum wells (ATQW) the linear and nonlinear optical absorption coefficient (OAC) and the optical refractive index change (ORIC) are analyzed according to the intense laser field (ILF). The obtained ...
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2019)
This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series ...
Comprehensive structural and optical characterization of AlAs/GaAs distributed Bragg reflector
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2019)
30-pair AlAs/GaAs distributed Bragg reflector (DBR), which has 1030 nm center reflectivity, is studied extensively by means of High Resolution X-ray Diffraction (HR-XRD) and reflectivity measurements. Theta/2-Theta ...
Nonlinear Optical Rectification, Second and Third Harmonic Generations in Square-Step and Graded-Step Quantum Wells under Intense Laser Field
(IOP PUBLISHING LTD, 2019)
For square-step quantum wells (SSQWs) and graded-step quantum wells (GSQWs), the nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) coefficients under an intense ...