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Comparison of Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells as dependent on Al and In concentrations under intense laser field
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2015)
In this study, the electronic properties of Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells (QWs) are theoretically calculated as dependent on the intense laser field (ILF) and x-concentration value within the effective ...