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Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2018)
In this paper, the optical and electronic properties of asymmetric triple quantum well (ATQW) structures are studied depending on the indium concentrations while quantum well (QW) thicknesses and barrier widths are kept ...
Linear and nonlinear optical absorption coefficient and electronic features of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on barrier widths
(ELSEVIER GMBH, 2019)
In the present work, the effect of the barrier widths (BWs) on the linear and nonlinear optical absorption coefficient (OAC) and the electronic features of asymmetric triple Ga1-xAlxAs/GaAs (A structure) and Ga1-xInxAs/GaAs ...
Linear and nonlinear optical properties of asymmetric triple quantum wells under intense laser field
(IOP PUBLISHING LTD, 2019)
For asymmetric triple quantum wells (ATQW) the linear and nonlinear optical absorption coefficient (OAC) and the optical refractive index change (ORIC) are analyzed according to the intense laser field (ILF). The obtained ...
The effect of barrier width on the electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells
(ELSEVIER SCIENCE BV, 2018)
In this study, the electronic properties of symmetric and asymmetric double Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells have been investigated depending on the barrier width. Using the effective mass approach, ...
Nonlinear Optical Rectification, Second and Third Harmonic Generations in Square-Step and Graded-Step Quantum Wells under Intense Laser Field
(IOP PUBLISHING LTD, 2019)
For square-step quantum wells (SSQWs) and graded-step quantum wells (GSQWs), the nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) coefficients under an intense ...