Now showing items 1-2 of 2
Effect of the intense laser field on the valance band for Ga1-xAlxAs/GaAs heterostructure
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
The energy levels of holes in symmetric single quantum well under the laser field are theoretically calculated within the framework of the effective mass approximation. Results obtained show that the potential profile and ...
The effects of intense laser field and electric field on intersubband absorption in a double-graded quantum well
(ELSEVIER SCIENCE BV, 2008)
In this study, the intense laser-field dependence of intersubband absorption coefficient for 1-2 transition in GaAs/Ga1-xAlxAs DGQW under the electric field is investigated. The obtained results show that by changing the ...