dc.contributor.author | Mora-Ramos, M. E. | |
dc.contributor.author | Duque, C. A. | |
dc.contributor.author | Kasapoglu, E. | |
dc.contributor.author | Sari, H. | |
dc.contributor.author | Sokmen, I. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T10:03:25Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T10:03:25Z | |
dc.date.issued | 2012 | |
dc.identifier.issn | 1434-6028 | |
dc.identifier.issn | 1434-6036 | |
dc.identifier.uri | https://dx.doi.org/10.1140/epjb/e2012-30148-5 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/9024 | |
dc.description | WOS: 000309467500018 | en_US |
dc.description.abstract | The effects of intense laser radiation on the exciton states in GaAs-Ga1-xAlxAs quantum dots are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The laser field modifies the Coulomb potential via the generation of two interaction centers. The exciton binding energy behaves as a decreasing function of the laser field strength, as well as of the size of the quantum dot. The normalized photoluminescence peak energy increases with the laser field strength and behaves as a decreasing function of the dot's dimensions for fixed laser field intensity. | en_US |
dc.description.sponsorship | Mexican CONACYT [CB-2008-101777]; CODI-Universidad de Antioquia [E01553]; Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia; CONACYT (Mexico); COLCIENCIAS (Colombia); Scientific and Technological Research Council of Turkey (TUBITAK) [TUBITAK 109T650] | en_US |
dc.description.sponsorship | MEMR acknowledges support from Mexican CONACYT through grant CB-2008-101777. This research was partially supported by Colombian Agencies: CODI-Universidad de Antioquia (project: E01553-Propiedades opticas no lineales en heteroestructuras semiconductoras de baja dimensionalidad (nitruros y arseniuros)) and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD-exclusive dedication project 2012-2013). MEMR and CAD thank CONACYT (Mexico) and COLCIENCIAS (Colombia) for support under the 2012-2013 Bilateral Agreement "Estudio de propiedades opticas, electronicas y de transporte en sistemas de baja dimension basados en carbono y semiconductores III-V: efectos de campos externos, temperatura y presion hidrostatica". The work was developed with the help of CENAPAD-SP, Brazil. The authors are grateful to The Scientific and Technological Research Council of Turkey (TUBITAK) for a research grant (TUBITAK 109T650). | en_US |
dc.language.iso | eng | en_US |
dc.publisher | SPRINGER | en_US |
dc.relation.isversionof | 10.1140/epjb/e2012-30148-5 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.title | Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field | en_US |
dc.type | article | en_US |
dc.relation.journal | EUROPEAN PHYSICAL JOURNAL B | en_US |
dc.contributor.department | [Mora-Ramos, M. E.] Univ Autonoma Estado Morelos, Fac Ciencias, Cuernavaca 62209, Morelos, Mexico -- [Duque, C. A.] Univ Antioquia, Inst Fis, Medellin 1226, Colombia -- [Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey | en_US |
dc.contributor.authorID | Mora-Ramos, Miguel Eduardo -- 0000-0002-6232-9958 | en_US |
dc.identifier.volume | 85 | en_US |
dc.identifier.issue | 9 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |