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Electronic band structure of GaAs/AlxGa1-xAs superlattice in an intense laser field

dc.contributor.authorSakiroglu, S.
dc.contributor.authorYesilgul, U.
dc.contributor.authorUngan, F.
dc.contributor.authorDuque, C. A.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:03:42Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:03:42Z
dc.date.issued2012
dc.identifier.issn0022-2313
dc.identifier.urihttps://dx.doi.org/10.1016/j.jlumin.2012.01.060
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9123
dc.descriptionWOS: 000302662700046en_US
dc.description.abstractWe perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates an additional geometric confinement on the electronic states. Numerical results show that when tuning the strength of the laser field significant changes come in the electronic energy levels and density of states. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTUBITAK (COST) [109T650]; CODI-Universidad de Antioquia (Estrategia de Sostenibilidad Grupo de Materia Condensada-UdeA); Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia; El Patrimonio Autonomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnologia y la Innovacion Francisco Jose de Caldas [275-2011]en_US
dc.description.sponsorshipWe gratefully acknowledge the financial support from TUBITAK (COST) (Grant No. 109T650). CAD is grateful to the Colombian Agencies CODI-Universidad de Antioquia (Estrategia de Sostenibilidad Grupo de Materia Condensada-UdeA, 2011-2012), Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD-exclusive dedication project 2011-2012), and "El Patrimonio Autonomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnologia y la Innovacion Francisco Jose de Caldas" Contract RC - No. 275-2011.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.jlumin.2012.01.060en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSuperlatticesen_US
dc.subjectIntense laser fieldsen_US
dc.subjectLaser-dressed potentialen_US
dc.titleElectronic band structure of GaAs/AlxGa1-xAs superlattice in an intense laser fielden_US
dc.typearticleen_US
dc.relation.journalJOURNAL OF LUMINESCENCEen_US
dc.contributor.department[Sakiroglu, S. -- Sokmen, I.] Dokuz Eylul Univ, Fac Sci, Dept Phys, TR-35160 Izmir, Turkey -- [Yesilgul, U. -- Ungan, F. -- Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey -- [Duque, C. A.] Univ Antioquia, Inst Fis, Medellin 1226, Colombiaen_US
dc.identifier.volume132en_US
dc.identifier.issue6en_US
dc.identifier.endpage1588en_US
dc.identifier.startpage1584en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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