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Effects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum well

dc.contributor.authorYesilgul, U.
dc.contributor.authorUngan, F.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:04:06Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:04:06Z
dc.date.issued2012
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.urihttps://dx.doi.org/10.1016/j.physb.2011.11.030
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9240
dc.descriptionWOS: 000300596000044en_US
dc.description.abstractThe effects of an intense, high-frequency laser field linearly polarized along the growth direction on the binding energy of excitons confined in a GaInNAs/GaAs quantum well is computed for different nitrogen and indium mole fractions by means of a variational technique within the effective-mass approximation. Our results show that such laser field creates an additional geometric confinement on the electronic and exciton states in the quantum well and the exciton binding energy depends on both the nitrogen and indium concentrations. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [COST 109T650]en_US
dc.description.sponsorshipThis work supported by The Scientific and Technological Research Council of Turkey (TUBITAK) for a research Grant COST 109T650.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.physb.2011.11.030en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuantum wellsen_US
dc.subjectSemiconductorsen_US
dc.subjectExciton binding energyen_US
dc.titleEffects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum wellen_US
dc.typearticleen_US
dc.relation.journalPHYSICA B-CONDENSED MATTERen_US
dc.contributor.department[Yesilgul, U. -- Ungan, F. -- Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkeyen_US
dc.identifier.volume407en_US
dc.identifier.issue3en_US
dc.identifier.endpage532en_US
dc.identifier.startpage528en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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