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Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well

dc.contributor.authorDuque, C. A.
dc.contributor.authorMora-Ramos, M. E.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:04:33Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:04:33Z
dc.date.issued2012
dc.identifier.issn0370-1972
dc.identifier.urihttps://dx.doi.org/10.1002/pssb.201147250
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9346
dc.descriptionWOS: 000300694800016en_US
dc.description.abstractThe effects of intense laser radiation on the exciton states in GaAs-Ga1xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The results for the exciton binding energy, the energy of the exciton-related photoluminescence peak, and the carriers overlap integral are presented for several configurations of the quantum well size, the strength of the applied electric fields, and the incident laser radiation.en_US
dc.description.sponsorshipCOLCIENCIAS; CODI-Universidad de Antioquia (Estrategia de Sostenibilidad Grupo de Materia Condensada-UdeA; Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD); El Patrimonio Autonomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnologia y la Innovacion Francisco Jose de Caldas [275-2011]; Scientific and Technological Research Council of Turkey (TUBITAK) [TUBITAK 109T650]en_US
dc.description.sponsorshipThis research was partially supported by Colombian Agencies: COLCIENCIAS, CODI-Universidad de Antioquia (Estrategia de Sostenibilidad Grupo de Materia Condensada-UdeA, 2009-2010, 2010-2011), Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD-exclusive dedication project 2011-2012), and "El Patrimonio Autonomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnologia y la Innovacion Francisco Jose de Caldas" Contract RC - No. 275-2011. The work was developed with the help of CENAPAD-SP, Brazil. The authors are grateful to The Scientific and Technological Research Council of Turkey (TUBITAK) for a research grant (TUBITAK 109T650).en_US
dc.language.isoengen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.relation.isversionof10.1002/pssb.201147250en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectelectric fieldsen_US
dc.subjectexcitonsen_US
dc.subjectintense laser fieldsen_US
dc.subjectquantum wellsen_US
dc.titleCombined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum wellen_US
dc.typearticleen_US
dc.relation.journalPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICSen_US
dc.contributor.department[Duque, C. A.] Univ Antioquia, Inst Fis, Medellin 1226, Colombia -- [Mora-Ramos, M. E.] Univ Autonoma Estado Morelos, Fac Ciencias, Cuernavaca 62209, Morelos, Mexico -- [Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkeyen_US
dc.contributor.authorIDMora-Ramos, Miguel Eduardo -- 0000-0002-6232-9958en_US
dc.identifier.volume249en_US
dc.identifier.issue1en_US
dc.identifier.endpage127en_US
dc.identifier.startpage118en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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