| dc.contributor.author | Ungan, F. | |
| dc.contributor.author | Kasapoglu, E. | |
| dc.contributor.author | Duque, C. A. | |
| dc.contributor.author | Sari, H. | |
| dc.contributor.author | Sokmen, I. | |
| dc.date.accessioned | 2019-07-27T12:10:23Z | |
| dc.date.accessioned | 2019-07-28T10:04:55Z | |
| dc.date.available | 2019-07-27T12:10:23Z | |
| dc.date.available | 2019-07-28T10:04:55Z | |
| dc.date.issued | 2011 | |
| dc.identifier.issn | 1386-9477 | |
| dc.identifier.uri | https://dx.doi.org/10.1016/j.physe.2011.10.002 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12418/9420 | |
| dc.description | WOS: 000298222800032 | en_US |
| dc.description.abstract | The effect of the intense laser field on the intersubband optical absorption for (1-2) transition in a Ga1-xInxNyAs1-y/GaAs single quantum well for different nitrogen and indium concentrations is investigated. The numerical calculations are performed in the effective-mass approximation. We have found that the increase of the nitrogen and indium concentrations with intense laser field leads to important effects on the optical properties of a quantum well. The obtained results show that the desired energy range corresponding to the subbands may be tuned by changing the laser intensity and the nitrogen and indium concentrations. This tunability gives a possibility for near-infrared electro-absorption modulators and quantum well infrared detectors. (C) 2011 Elsevier B.V. All rights reserved. | en_US |
| dc.description.sponsorship | TUBITAK (COST) [109T650]; COLCIENCIAS; CODI-Universidad de Antioquia (Estrategia de Sostenibilidad Grupo de Mate-ria Condensada-UdeA); Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD); Excellence Center for Novel Materials/COLCIENCIAS [043-2005] | en_US |
| dc.description.sponsorship | This work supported by TUBITAK (COST) 109T650 and this research was partially supported by Colombian Agencies: COLCIENCIAS, CODI-Universidad de Antioquia (Estrategia de Sostenibilidad Grupo de Mate-ria Condensada-UdeA, 2010-2011), Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD-exclusive dedication project 2010-2011), and the Excellence Center for Novel Materials/COLCIENCIAS (Contract no. 043-2005). | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | ELSEVIER SCIENCE BV | en_US |
| dc.relation.isversionof | 10.1016/j.physe.2011.10.002 | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well | en_US |
| dc.type | article | en_US |
| dc.relation.journal | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | en_US |
| dc.contributor.department | [Ungan, F. -- Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Duque, C. A.] Univ Antioquia, Inst Fis, Medellin 1226, Colombia -- [Sokmen, I.] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey | en_US |
| dc.identifier.volume | 44 | en_US |
| dc.identifier.issue | 2 | en_US |
| dc.identifier.endpage | 520 | en_US |
| dc.identifier.startpage | 515 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
