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dc.contributor.authorYesilgul, U.
dc.contributor.authorSakiroglu, S.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSoekmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:05:46Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:05:46Z
dc.date.issued2011
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.urihttps://dx.doi.org/10.1016/j.physb.2011.01.045
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9571
dc.descriptionWOS: 000289060100017en_US
dc.description.abstractThe effects of intense high-frequency laser field on photoionization cross-section and binding energy of shallow-donor impurities in GaAs/GaAlAs quantum dots are calculated using variational method with the effective-mass approximation. From these calculations, it has been concluded that the dependences of the impurity binding energy and photoionization cross-section on the intense laser field are very significant. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.physb.2011.01.045en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhotoionizatonen_US
dc.subjectQuantum doten_US
dc.subjectImpurityen_US
dc.subjectIntense laser fielden_US
dc.titleHydrogenic impurities in quantum dots under intense high-frequency laser fielden_US
dc.typearticleen_US
dc.relation.journalPHYSICA B-CONDENSED MATTERen_US
dc.contributor.department[Yesilgul, U. -- Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sakiroglu, S. -- Soekmen, I.] Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.identifier.volume406en_US
dc.identifier.issue8en_US
dc.identifier.endpage1444en_US
dc.identifier.startpage1441en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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