Yazar "Sari, Huseyin" seçeneğine göre listele

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    Effect of Intense Laser Field in Gaussian Quantum Well With Position-Dependent Effective Mass
    (Wiley-V C H Verlag Gmbh, 2019) Sari, Huseyin; Kasapoglu, Esin; Sakiroglu, Serpil; Sokmen, Ismail; Duque, Carlos A.
    In this paper, the effects of the intense laser field (ILF) and position dependent mass (PDM) on the electronic structure in a Gaussian quantum well are theoretically deduced by using the diagonalization method for obtaining energy levels and corresponding wave functions. We find that, in the case of narrow PDM distribution, the dependence of the energy levels on the effective length of the electron mass distribution becomes more apparent, and the evolution of the dressed mass with ILF is significant. Given this feature, it is more meaningful to take into consideration the PDM of the electron in the low dimensional semiconductor heterostructures under the ILF.
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    The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well
    (SPRINGER, 2012) Yesilgul, Unal; Ungan, Fatih; Sakiroglu, Serpil; Duque, Carlos; Mora-Ramos, Miguel; Kasapoglu, Esin; Sari, Huseyin; Sokmen, Ismail
    Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.
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    Effect of the High-Frequency Laser Radiation on the Nonlinear Optical Properties of n-Type Double delta-Doped GaAs Quantum Wells
    (AMER SCIENTIFIC PUBLISHERS, 2019) Ungan, Fatih; Sari, Huseyin; Kasapoglu, Esin; Yesilgul, Unal; Sakiroglu, Serpil; Sokmen, Ismail
    In the present work, the effect of non-resonant intense laser field on the nonlinear optical rectification and second and third harmonic generation of n-type double delta-doped GaAs quantum well is studied in detail. The energy eigenvalues and eigenfunctions of this structure are calculated within the framework of effective mass and envelope function approximations. Analytic formulas for the coefficients of nonlinear optical rectification and second and third harmonic generation are obtained using the compact-density matrix approach (CDMA) and iterative method. Based on this model, our obtained numerical results are reported as a function of incident photon energy for several values of non-resonant intense laser field. The results show that the coefficients of nonlinear optical rectification and second and third harmonic generation are strongly affected by the non-resonant intense laser field.
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    Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well
    (SPRINGER, 2012) Ungan, Fatih; Yesilgul, Unal; Sakiroglu, Serpil; Kasapoglu, Esin; Erol, Ayse; Arikan, Mehmet Cetin; Sari, Huseyin; Sokmen, Ismail
    Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - x In (x) N (y) As1 - y /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.
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    Nonlinear optical properties of asymmetric n-type double delta-doped GaAs quantum well under intense laser field? (vol 90, 162, 2017)
    (SPRINGER, 2018) Sari, Huseyin; Kasapoglu, Esin; Yesilgul, Unal; Sakiroglu, Serpil; Ungan, Fatih; Sokmen, Ismail
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