Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - x In (x) N (y) As1 - y /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.