Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE

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dc.contributor.authorPerkitel, Izel
dc.contributor.authorDemir, Ilkay
dc.date.accessioned2025-05-04T16:42:05Z
dc.date.available2025-05-04T16:42:05Z
dc.date.issued2023
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractIn this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In0.67Ga0.33As/In0.36Al0.64As quantum cascade laser (QCL) structure grown on InP substrate by Metal Organic Vapor Phase Epitaxy (MOVPE). In situ reflectance spectroscopy and high resolution X-ray diffraction (HRXRD) technique have been used for the analysis of growth steps and crystalline quality of QCL structures, respectively. In addition, since thickness accuracy is very important for QCLs, two different thickness calculation methods have been used in the Global Fit simulation program for detailed thickness accuracy of structures. As a result, optimum values for thickness accuracy have been obtained as 5 and 10 s between undoped and Si-doped layers, respectively, as verified by the two methods. © 2022 Elsevier B.V.
dc.description.sponsorshipNanophotonics Research and Application Center at Sivas Cumhuriyet University
dc.description.sponsorshipScientific Research Project Fund of Sivas Cumhuriyet University, (M-2022-841, MRK-2022-003)
dc.identifier.doi10.1016/j.molstruc.2022.134203
dc.identifier.issn0022-2860
dc.identifier.scopus2-s2.0-85139263903
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.molstruc.2022.134203
dc.identifier.urihttps://hdl.handle.net/20.500.12418/35050
dc.identifier.volume1272
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Molecular Structure
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_Scopus_20250504
dc.subjectin-situ reflectance
dc.subjectMOVPE
dc.subjectQCL
dc.subjectthickness sensitivity
dc.subjectXRD
dc.titleEffect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
dc.typeArticle

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