Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

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dc.contributor.authorDemir, İlkay
dc.date.accessioned2024-10-26T17:34:06Z
dc.date.available2024-10-26T17:34:06Z
dc.date.issued2018
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractIn this work, MOVPE (Metalorganic Vapor Phase Epitaxy) growth and characterization studies of high Al content AlGaN epilayers are reported. We utilize high resolution X-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques to analyze the crystalline quality and surface morphology of AlGaN epilayers. The role of the growth temperature of AlGaN epilayers on the structural quality and the surface morphology was investigated. Growth and measurement results show that single phase AlGaN epilayers were grown on AlN/Al2O3 template. It is concluded that the increasing growth temperature increases the Al content of AlGaN epilayers which enable to control the alloy concentration of AlGaN. Furthermore, the increasing Al content in AlGaN epilayers leads to the smooth surface which indicates that the decreasing number of dislocation density.
dc.identifier.doi10.17776/csj.453576
dc.identifier.endpage733
dc.identifier.issn2587-2680
dc.identifier.issn2587-246X
dc.identifier.issue3
dc.identifier.startpage728
dc.identifier.trdizinid302550
dc.identifier.urihttps://doi.org/10.17776/csj.453576
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/302550
dc.identifier.urihttps://hdl.handle.net/20.500.12418/23519
dc.identifier.volume39
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofCumhuriyet Science Journal
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectNanobilim ve Nanoteknoloji
dc.titleGrowth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
dc.typeArticle

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