A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices. InxGa1-xAs is renowned for its superior electron mobility and broad spectral response, making it indispensable in applications ranging from photodetectors to quantum cascade lasers. Employing a horizontal flow reactor MOVPE (metal-organic vapor phase epitaxy) technique, we meticulously grew n-InxGa1-xAs epilayers under varying conditions to investigate the impact of indium content, growth temperature, and V/III ratio on the material's structural, optical, and electrical properties. HRXRD (High-resolution X-ray diffraction) and Hall-effect measurements provided insights into the correlation between growth parameters and epitaxial layer quality, including dislocation density and carrier mobility. Our findings highlight the delicate balance required in the growth process to optimize the InxGa1-xAs /InP structure's performance for advanced semiconductor applications. The research underscores the potential of tailored InxGa1-xAs layers to push the boundaries of current photonics and optoelectronics technologies, emphasizing the importance of growth condition optimization for enhancing device efficiency and thermal stability.