The temperature dependence of the electronic structure of Si $\\delta$-doped GaAs
| dc.contributor.author | Öztürk, Emine | |
| dc.date.accessioned | 2024-10-26T17:44:32Z | |
| dc.date.available | 2024-10-26T17:44:32Z | |
| dc.date.issued | 2002 | |
| dc.department | Sivas Cumhuriyet Üniversitesi | |
| dc.description.abstract | We investigated theoretically the change of electronic properties of Si $\\delta$-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration. | |
| dc.identifier.endpage | 471 | |
| dc.identifier.issn | 1300-0101 | |
| dc.identifier.issn | 1303-6122 | |
| dc.identifier.issue | 6 | |
| dc.identifier.startpage | 465 | |
| dc.identifier.trdizinid | 32746 | |
| dc.identifier.uri | https://search.trdizin.gov.tr/tr/yayin/detay/32746 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12418/25331 | |
| dc.identifier.volume | 26 | |
| dc.indekslendigikaynak | TR-Dizin | |
| dc.language.iso | en | |
| dc.relation.ispartof | Turkish Journal of Physics | |
| dc.relation.publicationcategory | Other | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.subject | Fizik | |
| dc.subject | Uygulamalı | |
| dc.title | The temperature dependence of the electronic structure of Si $\\delta$-doped GaAs | |
| dc.type | Other |
