Nonlinear optical properties of a quantum well with inversely quadratic Hellman potential

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dc.contributor.authorTurkoglu, A.
dc.contributor.authorDakhlaoui, H.
dc.contributor.authorDurmuslar, A. Salman
dc.contributor.authorMora-Ramos, M.E.
dc.contributor.authorUngan, F.
dc.date.accessioned2024-10-26T17:51:45Z
dc.date.available2024-10-26T17:51:45Z
dc.date.issued2021
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractAbstract: A theoretical investigation of intraband nonlinear optical properties of a GaAs quantum well with inversely quadratic Hellman potential have been performed. It considers the presence of external electric and magnetic fields. In addition to this, the effects of the adjustable physical parameters (? and V) of the system on the optical properties of this structure were also investigated. For these numerical calculations, firstly, the conduction subband energy levels and the corresponding wave functions are obtained by solving the Schrödinger equation using the diagonalization method within the framework of effective mass and parabolic band approximations. Based on this information, results of numerical calculations for the linear, third-order nonlinear, and total optical absorption and relative refractive index change coefficients are presented. The obtained numerical results show the increase of the resonance peaks amplitudes with applied external electric and magnetic fields, as well as the shifting of their position the towards higher energies. It was also observed that the variations in ? and V have important effects on the magnitude and position of the resonance peaks. We believe that these results can be helpful in the design and practice of the optoelectronic devices used in the terahertz electromagnetic spectrum. Graphic abstract: [Figure not available: see fulltext.] © 2021, The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature.
dc.identifier.doi10.1140/epjb/s10051-021-00129-4
dc.identifier.issn1434-6028
dc.identifier.issue5
dc.identifier.scopus2-s2.0-85106959010
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1140/epjb/s10051-021-00129-4
dc.identifier.urihttps://hdl.handle.net/20.500.12418/26411
dc.identifier.volume94
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Science and Business Media Deutschland GmbH
dc.relation.ispartofEuropean Physical Journal B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectGallium arsenide; III-V semiconductors; Light absorption; Magnetic fields; Numerical methods; Optoelectronic devices; Refractive index; Semiconductor quantum wells; Wave functions; Design and practices; Diagonalization method; Electric and magnetic fields; Electromagnetic spectra; Non-linear optical properties; Numerical calculation; Refractive index changes; Theoretical investigations; Nonlinear optics
dc.titleNonlinear optical properties of a quantum well with inversely quadratic Hellman potential
dc.typeArticle

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