Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures

In this study, second order harmonic generation (SHG) coefficient in asymmetric double delta doped wells (ADQW) wereinvestigated for a uniform doping distribution model. The electronic propertiesof GaAs structure with ADQW, such as the potential profile, sub-band energylevels, wave functions and charge densities are calculatedby self-consistent the Schrödinger and Poisson equations. According to the parameters used in this study, I have seen that for the doping concentration, SHG peak size in ADQW structure with theintersubband relaxation time  gives the same peak magnitude value with   for thedoping concentration 5. Also, for the thickness of the donordistribution  the peaksize value of SHG with  hasapproximately the same behavior with   for thedonor distribution thickness . The dependence onthe structural parameters of the nonlinear transitions in the second orderbetween the sub-bands is more important for the potential variations of thephotodetectors and optical modulators. Thesestructures will have an important place in the future research of quantumphoto-electronic devices.