The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

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dc.contributor.authorAltuntas, İsmail
dc.contributor.authorElagöz, Sezai
dc.date.accessioned2024-10-26T17:42:45Z
dc.date.available2024-10-26T17:42:45Z
dc.date.issued2021
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractEffect of different nucleation layer temperatures (LT-GaN growth temperature) on the properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ reflectance curves demonstrate that higher LT-GaN growth temperatures cause fast coalescence (shorter transition time) of GaN nucleation islands. Both photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD) are used to demonstrate the influence of LT-GaN growth temperature on optical and structural properties of subsequent GaN epilayer, respectively. It is observed that the change of LT-GaN growth temperature has an effect on both full-width at half-maximum (FWHM) values obtained from the results of HRXRD measurement and yellow luminescence peak intensity. It is seen that the yellow luminescence peak intensities for samples alter with LT-GaN growth temperature.
dc.identifier.doi10.46460/ijiea.898795
dc.identifier.endpage10
dc.identifier.issn2587-1943
dc.identifier.issue1
dc.identifier.startpage6
dc.identifier.trdizinid526929
dc.identifier.urihttps://doi.org/10.46460/ijiea.898795
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/526929
dc.identifier.urihttps://hdl.handle.net/20.500.12418/24783
dc.identifier.volume5
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofInternational Journal of Innovative Engineering Applications
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectCharacterization
dc.subjectGallium nitride
dc.subjectEpitaxy
dc.subjectMetal organic vapor phase epitaxy
dc.titleThe GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
dc.typeArticle

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