Browsing by Author "Altuntas, Ismail"
Now showing items 1-3 of 3
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Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
Demir, Ilkay; Altuntas, Ismail; Bulut, Baris; Ezzedini, Maher; Ergun, Yuksel; Elagoz, Sezai (IOP PUBLISHING LTD, 2018)We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced ... -
The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition
Altuntas, Ismail; Demir, Ilkay; Kasapoglu, Ahmet Emre; Mobtakeri, Soheil; Gur, Emre; Elagoz, Sezai (IOP PUBLISHING LTD, 2018)The aim of the study is to understand the effects of two stages of HT-GaN growth with different V/III ratios on optical, chemical and structural characteristics of the HT-GaN layer. In addition, the effects of two-stage ... -
Structural and electrical properties of nitrogen-doped ZnO thin films
Tuzemen, Ebru Senadim; Kara, Kamuran; Elagoz, Sezai; Takci, Deniz Kadir; Altuntas, Ismail; Esen, Ramazan (ELSEVIER SCIENCE BV, 2014)ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and ...