Structural and electrical properties of nitrogen-doped ZnO thin films
Date
2014Author
Tuzemen, Ebru SenadimKara, Kamuran
Elagoz, Sezai
Takci, Deniz Kadir
Altuntas, Ismail
Esen, Ramazan
Metadata
Show full item recordAbstract
ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and optical properties of thin films was investigated. XRD studies were carried out to analyze and compare the structural quality of undoped and nitrogen-doped ZnO films. Raman measurement was performed to study the doping effects in the ZnO. The optical transmittances of all films are studied as a function of wavelength using UV-VIS-NIR spectrophotometer. The optical band gap values of the films are found using absorbance spectrums. The electrical studies for the films are carried out by using Hall-effect measurements. (C) 2014 Elsevier B.V. All rights reserved.
Source
APPLIED SURFACE SCIENCEVolume
318Collections
- Makale Koleksiyonu [5200]
- Makale Koleksiyonu [5745]
- Öksüz Yayınlar Koleksiyonu - WoS [6162]