Browsing by Subject "QCL"
Now showing items 1-2 of 2
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Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
(15.01.2023)In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown on ... -
Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2016)We report the growth of high quality InGaAs/InAlAs quantum cascade laser (QCL) structure which composed of superlattices (SLs) and the effects of interruption time between each layer of the SL structure. Inserting an ...