Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
Date
15.01.2023Metadata
Show full item recordAbstract
In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition
time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown
on InP substrate by Metal Organic Vapor Phase Epitaxy (MOVPE). In situ reflectance spectroscopy and
high resolution X-ray diffraction (HRXRD) technique have been used for the analysis of growth steps and
crystalline quality of QCL structures, respectively. In addition, since thickness accuracy is very important
for QCLs, two different thickness calculation methods have been used in the Global Fit simulation program
for detailed thickness accuracy of structures. As a result, optimum values for thickness accuracy
have been obtained as 5 and 10 s between undoped and Si-doped layers, respectively, as verified by the
two methods.