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Now showing items 21-24 of 24
A new approach to quantum well infrared photodetectors: Staircase-like quantum well and barriers
(ELSEVIER SCIENCE BV, 2006)
We present a theoretical investigation of a novel staircase-like quantum well infrared photodetector (QWIP). The proposed structure makes use of quantum wells and barriers with increasing Al content both in the wells and ...
An alternative method for the exact calculation of Wannier-Stark localization in superlattices
(ACADEMIC PRESS LTD, 2001)
We present an alternative method for the exact calculations of the Wannier-Stark (WS) localization in a long periodic potential corresponding to a (50 Angstrom /30 Angstrom) GaAs/Ga0.7Al0.3As superlattice. We show that the ...
Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ...
Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field
(ACADEMIC PRESS LTD, 1998)
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of ...