The electric field dependence of the photoionization cross-section of shallow donor impurities in quantum dots: Infinite and finite model
Abstract
Using a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function of the photon energy. Our calculations have revealed the dependence of the photodonization cross-section on the electric field, the size of the quantum dot and the impurity position.
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SURFACE REVIEW AND LETTERSVolume
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