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dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorYesilgul, U.
dc.contributor.authorSokmen, O.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:17:42Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:17:42Z
dc.date.issued2006
dc.identifier.issn0218-625X
dc.identifier.urihttps://dx.doi.org/10.1142/S0218625X06008797
dc.identifier.urihttps://hdl.handle.net/20.500.12418/10757
dc.descriptionWOS: 000245999400003en_US
dc.description.abstractUsing a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function of the photon energy. Our calculations have revealed the dependence of the photodonization cross-section on the electric field, the size of the quantum dot and the impurity position.en_US
dc.language.isoengen_US
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTDen_US
dc.relation.isversionof10.1142/S0218625X06008797en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectphotoionizationen_US
dc.subjectquantum doten_US
dc.subjectdonor impurityen_US
dc.titleThe electric field dependence of the photoionization cross-section of shallow donor impurities in quantum dots: Infinite and finite modelen_US
dc.typearticleen_US
dc.relation.journalSURFACE REVIEW AND LETTERSen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.identifier.volume13en_US
dc.identifier.issue6en_US
dc.identifier.endpage752en_US
dc.identifier.startpage747en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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