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Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing
(Elsevier, 2021)
In this study, gallium oxide (Ga2O3) thin films were deposited on sapphire and n-Si substrates using Ga2O3 target by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 °C at variable RF power and ...
Comprehensive growth and characterization study of GeOx/Si
(ELSEVIER, 2023)
In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ...
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)
In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness
was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural
and optical ...