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The effects of hydrostatic pressure and applied electric field on shallow donor impurities in GaAs/GaAlAs graded quantum well

Date

2005

Author

Kasapoglu, E
Sari, H
Sokmen, I

Metadata

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Abstract

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

Source

SURFACE REVIEW AND LETTERS

Volume

12

Issue

2

URI

https://dx.doi.org/10.1142/S0218625X05006871
https://hdl.handle.net/20.500.12418/11038

Collections

  • Makale Koleksiyonu [5200]
  • Makale Koleksiyonu [5745]
  • Öksüz Yayınlar Koleksiyonu - WoS [6175]



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