dc.contributor.author | Kasapoglu, E | |
dc.contributor.author | Sari, H | |
dc.contributor.author | Sokmen, I | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T10:22:13Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T10:22:13Z | |
dc.date.issued | 2005 | |
dc.identifier.issn | 0218-625X | |
dc.identifier.uri | https://dx.doi.org/10.1142/S0218625X05006871 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/11038 | |
dc.description | WOS: 000230763800002 | en_US |
dc.description.abstract | Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | WORLD SCIENTIFIC PUBL CO PTE LTD | en_US |
dc.relation.isversionof | 10.1142/S0218625X05006871 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | graded quantum well | en_US |
dc.subject | hydrostatic pressure | en_US |
dc.title | The effects of hydrostatic pressure and applied electric field on shallow donor impurities in GaAs/GaAlAs graded quantum well | en_US |
dc.type | article | en_US |
dc.relation.journal | SURFACE REVIEW AND LETTERS | en_US |
dc.contributor.department | Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkey | en_US |
dc.identifier.volume | 12 | en_US |
dc.identifier.issue | 2 | en_US |
dc.identifier.endpage | 159 | en_US |
dc.identifier.startpage | 155 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |