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Photoluminescence characteristic of as-grown and thermally annealed nand p-type modulation-doped Ga0.68In0.32NxAs1-x/GaAs quantum well structures
(9.6.2021)
The electronic band structure of n- and p-type modulation-doped Ga0.68In0.32NyAs1-y/GaAs (y=0, 0.9, 1.2, 1.7)
quantum well is calculated using the 10 band k•p model and the finite element method for valance band (VB)
and ...