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Watt-level and sub-100-fs self-starting mode-locked 2.4-µm Cr:ZnS oscillator enabled by GaSb-SESAMs
(09/02/2021)
Femtosecond lasers with high peak power at wavelengths above 2 µm are of high interest for generating mid-infrared (mid-IR) broadband coherent light for spectroscopic applications. Cr2+-doped ZnS/ZnSe solid-state lasers ...
High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization
(22/11/2021)
We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of ...
Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications
(20/01/2021)
Effect of high bandgap 0.5 nm AlAs on the electronic and optical properties of the In0.70Ga0.30As/Al0.60In0.40As superlattice is investigated by using effective mass approximation under the electric field. Electronic ...
Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime
(01/03/2021)
Semiconductor saturable absorber mirrors (SESAMs) are widely used for modelocking of various ultrafast lasers. The growing interest for SESAM-modelocked lasers in the short-wave infrared and mid-infrared regime requires ...