Browsing Sivas Cumhuriyet Üniversitesi Mühendislik Fakültesi by Author "Demir, İlkay"
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Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
Demir, İlkay; Altuntas, İsmail; Elagöz, Sezai (07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ... -
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
Baghdedi, Dhouha; Hopoğlu, Hicret; Demir, İlkay; Altuntaş, İsmail; Abdelmoula, Najmeddine; Şenadım, Tüzemen Ebru (14.10.2023)In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
Arbia, Marwa Ben; Demir, İlkay; Kaur, Navpreet; Saidi, Faouzi; Zappa, Dario; Comini, Elisabetta; Altuntaş, İsmail; Maaref, Hassen (15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
High-quality AlN growth: a detailed study on ammonia flow
Yolcu, Gamze; Koçak, Merve Nur; Ünal, Dudu Hatice; Altuntaş, İsmail; Demir, İlkay (25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
Pertikel, İzel; Kekül, Reyhan; Altuntaş, İsmail; Gür, Emre; Demir, İlkay (27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
Altuntas, İsmail; Koçak, Merve Nur; Gür, Emre; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, A. Emre; Horoz, Sabit; Demir, İlkay (02.02.2021)In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
Altuntas, İsmail; Koçak, Merve Nur; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, A. Emre; Horoz, Sabit; Gür, Emre; Demir, İlkay (02.02.2021)at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ... -
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
Hopoğlu, Hicret; Kaya, Dogan; Maslov, Mikhail M.; Kaya, Savas; Demir, İlkay; Altuntaş, İsmail; Ungan, Fatih; Akyol, Mustafa; Ekicibil, Ahmet; Şenadım, Tüzemen Ebru (28.04.2023)In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO) films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ... -
Modeling of temperature‑dependent photoluminescence of GaN epilayer by artificial neural network
ŞenadımTüzemen, Ebru; Yüksek, Ahmet Gürkan; Demir, İlkay; Horoz, Sabit; Altuntaş, İsmail (22.06.2023)Artificial neural networks (ANNs) are a type of machine learning model that are designed to mimic the structure and function of biological neurons. They are particularly well-suited for tasks such as image and speech ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
Şimşek, İrem; Yolcu, Gamze; Koçak, Merve Nur; Pürlü, Kağan; Altuntas, İsmail; Demir, İlkay (20.11.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
Şimşek, İrem; Yolcu, Gamze; Koçak, Merve Nur; Pürlü, Kağan; Altuntas, İsmail; Demir, İlkay (20.09.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Yüksek Güç-Frekans Uygulamaları Için MOCVD ile Epitaksiyel AlN Kristalinin Büyütülmesi, Katkılanması, Karakterizasyonu ve Aygıt Üretimi
Demir, İlkay (15.03.2021)Bu projede yüksek güç-frekans uygulamaları için MOCVD (metal organik kimyasal buhar depolama) ile epitaksiyel AlN kristalinin büyütülmesi, katkılanması, karakterizasyonu ve aygıt üretimi yapılarak diyot karakteristiklerinin ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
Tüzemen, Ebru Şenadım; Özer, Ali; Demir, İlkay; Altuntaş , İsmail; Şimşir, Mehmet (Springer, 2021)In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120 W power ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
Şenadım Tüzemen, Ebru; Özer, Ali; Altuntas, İsmail; Demir, İlkay; Şimşir, Mehmet (12.08.2021)In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...