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Now showing items 11-12 of 12
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)
High crystalline and optical quality aluminum nitride (AlN) films with thin
thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase
epitaxy) and the NH3 flow rate has been changed to improve the morphology
and ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...