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ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.07.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)
In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness
was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural
and optical ...
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(28.04.2023)
In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO)
films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ...
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)
Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to
LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ...
Modeling of temperature‑dependent photoluminescence of GaN epilayer by artificial neural network
(22.06.2023)
Artificial neural networks (ANNs) are a type of machine learning model that are designed to mimic the structure and function
of biological neurons. They are particularly well-suited for tasks such as image and speech ...
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)
High crystalline and optical quality aluminum nitride (AlN) films with thin
thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase
epitaxy) and the NH3 flow rate has been changed to improve the morphology
and ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...