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ARITILMIŞ KENTSEL ATIKSULARIN SULAMADA YENIDEN KULLANILABILIRLIĞININ ARAŞTIRILMASI: SIVAS ATIKSU ARITMA TESISI ÖRNEĞI
(NOBEL AKADEMİK YAYINCILIK, 2021)
İklim değişikliği etkilerinin yaşandığı ülkemiz ve dünyada kuraklıkla birlikte artan su ihtiyacı nedeniyle
tarım sektöründe arıtılmış atıksuların kullanımıyla su kaynaklarının etkin ve sürdürülebilir bir şekilde
korunması ...
Optimization of temperature and pretreatments for methane yield of hazelnut shells using the response surface methodology
(Elsevier, 2020)
In this study, NaOH pretreatment, H2SO4 pretreatment, thermal pretreatment and production temperature were
optimized to ensure maximum methane yield from hazelnut shells (HS) using the response surface methodology
(RSM). ...
CEVAP YÜZEY YÖNTEMİ İLE OPTİMİZASYON YÖNTEMİNİN MALZEME BİLİMİNDE UYGULAMALARI
(Gece kitaplığı, 2022)
Optimizasyon, bir prosesin cevap değişkenlerine bağlı olarak sistem
girdilerinin (bağımsız değişkenlerin) birbirleriyle olan etkileşimlerini ve
cevap değişkenlerine olan etkilerinin tümünün değerlendirilerek sistem ...
Optical and nano-mechanical characterization of c-axis oriented AlN film
(2022)
This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy
(MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic
ellipsometry. ...
ystematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(2022)
Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration
grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution
X-ray ...
Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes
(2022)
InGaN-based quantum wells (QWs) have higher threading dislocation density (TDD) in InGaN
Light-emitting diode (LED). Despite of higher TDD, variation of Indium (In) molar fraction in the
QW generate localized excitons ...
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(2022)
AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of
its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is
used as surfactant to improve ...
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(2022)
In this study, we report different SiH4 flow condition effects on crystal, surface, optical, and electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. ...
Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers
(2022)
Achieving high threshold current density and high optical confinement are big challenges in the realization of
high-performance aluminum gallium nitride (AlGaN)-based deep-ultraviolet (DUV) laser diode (LD). In this
work, ...
Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β-Ga2O3 on sapphire
(2022)
We report on the close oxygen coupled low-pressure chemical vapor deposition (COC-LPCVD) hetero-epitaxial growth of atomically smooth (− 201) oriented β−
Ga2O3 on c-plane sapphire. Utilizing a dedicated line within the ...