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Optimization of temperature and pretreatments for methane yield of hazelnut shells using the response surface methodology
(Elsevier, 2020)
In this study, NaOH pretreatment, H2SO4 pretreatment, thermal pretreatment and production temperature were
optimized to ensure maximum methane yield from hazelnut shells (HS) using the response surface methodology
(RSM). ...
Effects of pH and Current Density on Microstructure and Hardness of the Cobalt-Tungsten Coating
(Dergipark, 14.04.2022)
Effects of pH and Current Density on Microstructure and Hardness of the Cobalt-Tungsten Coating
A Novel Approach for Polyphase Filter Bank Design Using ABC Algorithm
(21.12.2022)
—Polyphase filter banks (PFBs) are the most
preferred multirate structures for subband coding in Digital
Signal Processing (DSP) and communication. For PFB design,
there are many important design parameters such as ...
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(3.06.2022)
AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of
its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is
used as surfactant to improve ...
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(5.01.2022)
The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High
indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted
for ...
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(26.06.2022)
AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ...
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(16.01.2022)
teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ...
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(10.12.2022)
Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration
grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution
X-ray ...
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN
(3.09.2022)
The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study
at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ...
Optical and nano-mechanical characterization of c-axis oriented AlN film
(19.05.2022)
This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy
(MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic
ellipsometry. ...