Influence of applied external fields on the nonlinear optical properties of a semi-infinite asymmetric AlxGa1-xAs/GaAs quantum well
Date
3 NovemberMetadata
Show full item recordAbstract
The asymmetric potential profiles are of great interest from the nonlinear optical properties point of view for
semiconductor devices. The reason for this statement is because the existing theories on nonlinear optical
properties obviously depends on the dipole matrix element for the involved transitions and an complete characterization
for asymmetric potential profiles enables to the semiconductor device designers to have possible
ranges of implementation and because the dipole matrix elements strongly depends on the asymmetry of the
potential profile. Once the potential profile is well defined, with the desired range on operation, the external
factors play also an important role on the optical properties tuning. In particular, in this paper we reported the
absorption coefficient and the relative refractive index changes for semi-infinite inverse Gaussian-like profile for
an AlxGa1����� xAs/GaAs quantum well when is subjected to a z-directed electric field, to an in-plane x-directed
magnetic field and finally to a non-resonant intense laser field effect, being the Al concentration the parameter
that allows to shape the potential profile. In general, we conclude that the external factor are an efficient way to
tune the optical properties that are in the range of the THz spectrum, at least for the intersubband transitions
reported here.