Effect of position-dependent effective mass on donor impurity- and exciton-related electronic and optical properties of 2D Gaussian quantum dots

Abstract

Using the compact density matrix scheme and the effective mass approximation, we study the influence of positiondependent electron and heavy-hole mass distributions on the impurity-related electronic properties, excitonic binding, and intersubband electron transitions in a two-dimensional quantum dot with Gaussian potential. The electronic structure has been obtained by using the two-dimensional diagonalization method. The obtained results show the significant influence of the functional form of the spatial mass distribution and structural geometry on the accurate determination of the impurity-related electronic structure, optical response, electron–hole overlap, and, therefore, the carrier lifetimes in the optoelectronic devices based on quantum dots.