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dc.contributor.authorRodríguez-Magdaleno, K. A.
dc.contributor.authorPérez-Álvarez, R.
dc.contributor.authorUngan, Fatih
dc.contributor.authorMartinez-Orozco, Juan Carlos
dc.date.accessioned2023-04-05T06:21:24Z
dc.date.available2023-04-05T06:21:24Z
dc.date.issued2022tr
dc.identifier.citationK.A. Rodríguez-Magdaleno , R. Pérez-Álvarez , F. Ungan , J.C. Martínez-Orozcotr
dc.identifier.urihttps://hdl.handle.net/20.500.12418/13331
dc.description.abstractIn this work, we theoretically calculated the intraband absorption coefficient (IAC) between the 1𝑠��� and 1𝑝��� conduction band states for a spherical core/shell/shell quantum dot (CSS-QD) as function of inner and outer shells’ sizes with and without the presence of strain effect. The electronic structure for the system is computed in the effective mass approximation framework and the strain effect is considered on the continuum elasticity model. We found out that as we compared the strained and the unstrained system, the former causes that the IAC undergoes a small redshift. A similar behavior occurs as the inner and outer shell size increase. The results show that the strain effect is an important factor that will be considered in these nanostructure type. The incorporation of inner and outer shells allowed us to extend some fractions of eV into the absorption spectrum that could be interesting as a mechanism to control the IAC device design.tr
dc.language.isoengtr
dc.rightsinfo:eu-repo/semantics/closedAccesstr
dc.subjectStrain effect Absorption coefficient Spherical quantum dot Intraband transitionstr
dc.titleStrain effect on the intraband absorption coefficient for spherical CdSe/CdS/ZnSe core–shell–shell quantum dotstr
dc.typearticletr
dc.relation.journalMaterials Science in Semiconductor Processingtr
dc.contributor.departmentFen Fakültesitr
dc.relation.publicationcategoryUluslararası Hakemli Dergide Makale - Kurum Öğretim Elemanıtr


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