Nonlinear optical properties in AlxGa1-xAs/GaAs double-graded quantum wells: The effect of the structure parameter, static electric, and magnetic field
Citation
H.S. Aydinoglu a , M. Sayrac b,* , M.E. Mora-Ramos c , F. Ungan d a Department of Medical Services and Techniques, Program of Opticianry, Vocational School of Healthcare, Sivas Cumhuriyet University, 58140, Sivas, Turkey b Faculty of Engineering, Department of Nanotechnology Engineering, Sivas Cumhuriyet University, 58140, Sivas, Turkey c Facultad de Ciencias, Universidad Autonoma ´ del Estado de Morelos, Ave. Universidad 1001, CP, 62209, Cuernavaca, Morelos, Mexico d Faculty of Science, Department of Physics, Sivas Cumhuriyet University, 58140, Sivas, TurkeyAbstract
We present a theoretical simulation of the impact of applied external electric and magnetic fields, as well as of the change in structure parameters, on the nonlinear optical rectification (NOR), second harmonic generation (SHG), and third harmonic generation (THG) in typical GaAs/GaAlAs asymmetric double graded quantum wells (ADGQWs). At first, we have calculated the wave functions and the subband energy levels for the lowest bounded four states confined within the structure by solving the Schrödinger equation using the diagonalization method within the framework of the effective mass and single parabolic band approximations. Then, analytical expressions for the NOR, SHG, and THG that arise from the compact density matrix approach are used to evaluate the corresponding coefficients. The simulation results show that the applied external fields and the structure parameters play an important role in the optical properties of ADGQWs.