| dc.description.abstract | In this paper, we theoretically investigated the influence of externally applied fields such as high-frequency non-resonant
intense laser fields, static electric and magnetic fields, as well as structure parameters, on the interband transitions and exciton
binding energy of a GaAs quantum well with Razavy confinement potential. To perform numerical calculations, the ground state
electron and heavy hole subband energy levels of the structure and the envelope wave functions corresponding to these states were
calculated using a variational method within the framework of the effective mass and parabolic band approaches. After obtaining
the numerical values, the band transitions of the structure, the exciton binding energy, the dipole moment matrix elements, and the
transition energy between the ground state electron and heavy hole subband energies of the structure were evaluated in detail. The
results show that the Razavy potential profile turns into a single QWstructure for particular dimensionless structure parameters and
the peak position of the interband transition coefficient shifts toward red (lower energy) with the increase in the structure parameters
and electric field strength, while it shifts toward the blue (higher energy) with the increase in the intensity of the intense laser field
and magnetic field.We believe that these numerical results will be useful in the design and production of next-generation electronic
and optoelectronic devices. | tr |
