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dc.contributor.authorPadmalochan Panda
dc.contributor.authorRamaseshan Rajagopalan
dc.contributor.authorS. Tripursundari
dc.contributor.authorİsmail Altuntaş
dc.contributor.authorİlkay Demir
dc.date.accessioned2023-06-21T13:07:37Z
dc.date.available2023-06-21T13:07:37Z
dc.date.issued19.05.2022tr
dc.identifier.urihttps://hdl.handle.net/20.500.12418/13845
dc.description.abstractThis paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. The crystal structure and the quality of the grown AlN epilayer film are analyzed using X-ray Diffraction and rocking curve techniques, respectively. Modelling of the ellipsometric data revealed that the uniaxial anisotropic refractive indices of the c-axis oriented film in the directions n‖ and n⊥ increased from 2.50 to 2.59 and 2.32 to 2.37, respectively with the increase in temperature from 223 to 573 K. The thermo-optic coefficients were evaluated to be around 10����� 5. Nano-mechanical characterization of this film showed an average hardness of 19.4 GPa at ambient temperature, which is higher than a-axis oriented AlN film. The average surface free energy of the synthesized film as evaluated from contact angle measurements is reported to be around 36.22 ± 0.64 mN/m. These results are highly relevant for a better understanding of c-axis oriented AlNbased materials in high-temperature ultraviolet optical devices.tr
dc.rightsinfo:eu-repo/semantics/openAccesstr
dc.titleOptical and nano-mechanical characterization of c-axis oriented AlN filmtr
dc.typearticletr
dc.contributor.departmentEğitim Bilimleri Enstitüsütr
dc.relation.publicationcategoryRaportr


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