| dc.contributor.author | Gamze Yolcu | |
| dc.contributor.author | İrem Şimşek | |
| dc.contributor.author | Reyhan kekül | |
| dc.contributor.author | İsmail Altuntaş | |
| dc.contributor.author | Sabit Horoz | |
| dc.contributor.author | İlkay Demir | |
| dc.date.accessioned | 2023-06-21T13:08:48Z | |
| dc.date.available | 2023-06-21T13:08:48Z | |
| dc.date.issued | 3.06.2022 | tr |
| dc.identifier.uri | https://hdl.handle.net/20.500.12418/13848 | |
| dc.description.abstract | AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of
its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is
used as surfactant to improve crystal quality and decrease dislocation density (DD) of AlN layers
grown on sapphire (Al2O3) substrate surfaces by Metal Organic Vapor Phase Epitaxy (MOVPE)
system. TMGa pre-flow time and pre-flow amount that TMGa pre-flow to the nucleation stage are
the subjects of two distinct optimization studies. The structural and optical properties of grown
AIN are examined by a high resolution X-ray diffractometer (HR-XRD), Raman spectroscopy, and
UV–Vis–NIR spectrophotometer, respectively. TMGa pre-flow time and TMGa pre-flow amount
determined to obtain high crystal quality AlN epilayers are 2 s and 0.446 × 10����� 5 mol/min,
respectively. HR-XRD investigation of these growths yields FWHM values of 159/2718 arcsec and
201/1550 arcsec for the ω (002) and ω (102) scans, respectively. | tr |
| dc.rights | info:eu-repo/semantics/openAccess | tr |
| dc.title | The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer | tr |
| dc.type | article | tr |
| dc.contributor.department | Eğitim Bilimleri Enstitüsü | tr |
| dc.relation.publicationcategory | Rapor | tr |
