| dc.description.abstract | AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu rapid thermal annealing (RTA) and in-situ process after the nucleation-layer (NL). The AlN nucleation-layer grown on sapphire has been annealed face-to-face with ex-situ (RTA) process for 3 min and with in-situ process for 3 h, then pulsed-atomic-layer-epitaxy AlN film has been grown at a high temperature. The samples have been characterized by high-resolution X-ray diffraction, atomic force microscopy, Ultraviolet–visible spectrometry, and Raman scattering to examine the structural properties, surface morphology, and optical properties. The sample annealed with the ex-situ (RTA) process, where rapid diffusion took place, has reached larger grain sizes and the dislocation density has decreased as the grain boundary decreased. Although better crystal quality has been obtained with the ex-situ (RTA) process, it has been observed that the surface roughness of the sample
annealed with the ex-situ (RTA) process is higher than that of the sample annealed with the in-situ process. Considering the results, a schematic prediction of the growth process after face-to-face annealing has been proposed. Experimental findings have shown that different annealing processes after growing the AlN-NL have a great effect on the properties of the AlN. | tr |
