dc.contributor.author | Öztürk, Emine | |
dc.date.accessioned | 2023-06-21T13:27:18Z | |
dc.date.available | 2023-06-21T13:27:18Z | |
dc.date.issued | 06.06.2022 | tr |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/13873 | |
dc.description.abstract | In this paper, we have studied the optical properties of semi-elliptical InAs quantum dots (QDs) embedded in GaAs. Under effective mass approximation, the finite element method has been used to obtain wavefunctions and corresponding energy eigenvalues in three-dimension. It has been shown that the wetting layer (WL) thickness has a small effect on the (1-2) transition, but is more effective on the dipole moment matrix element (DMME) of the (2-3) and (1-3) transitions. It is seen that the linear absorption coefficients of the (2-3) and (1-3) transition reach the maximum at 4 A WL thickness. After that, we set the WL thickness to 4 A and we studied the effect of the electric field applied through the axial direction. The same as the WL effect, the electric field has caused a minor change in DMME of the (1-2) transition but it makes DMME of the (2-3) and (1-3) transitions stronger which results in very high linear absorption coefficients. For 20 kV/cm electric field intensity, the linear absorption coefficient reaches the maximum for the (2-3) and (1-3) transition. | tr |
dc.language.iso | eng | tr |
dc.publisher | Elsevier | tr |
dc.relation.isversionof | 10.1016/j.tsf.2022.139322 | tr |
dc.rights | info:eu-repo/semantics/openAccess | tr |
dc.title | Linear and nonlinear optical properties of semi-elliptical InAs quantum dots: Effects of wetting layer thickness and electric field | tr |
dc.type | article | tr |
dc.relation.journal | Thin Solid Films | tr |
dc.contributor.department | Fen Fakültesi | tr |
dc.contributor.authorID | https://orcid.org/0000-0003-2508-0863 | tr |
dc.identifier.volume | 755 | tr |
dc.identifier.endpage | 139336 | tr |
dc.identifier.startpage | 139322 | tr |
dc.relation.publicationcategory | Ulusal Hakemli Dergide Makale - Kurum Öğretim Elemanı | tr |